Biruza

Russian development relate primarily to the epitaxial growth of the gas phase, repeating, and in some cases, ahead of the experience of foreign colleagues. In the synthesis of GaN rasplavnogo chelyabinsk group, apparently, is the first group in Russia, began the project.Congruent melting of GaN takes place at a pressure of 60000 atm of nitrogen and 2200 ? C, which technically prevents the introduction of the method of growing GaN from its own melt However, gallium nitride may reversibly dissolved in a suitable melt The value of solubility is crucial for the formation of GaN Since 1997, Cornell University (United States) began to grow gallium nitride in the reaction of nitrogen (30-50 atm) with a solution of Na-Ga (750-850 ? C), which continued in Japan.